SQS966ENW-T1_GE3

SQS966ENW-T1_GE3

Part Number: SQS966ENW-T1_GE3
Product Classification: FET, MOSFET Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6A PWRPAK1212
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade Automotive
  • Qualification AEC-Q101
  • Vgs(th) (Max) @ Id 2.5V @ 250µA
  • Configuration 2 N-Channel (Dual)
  • Current - Continuous Drain (Id) @ 25°C 6A (Tc)
  • Drain to Source Voltage (Vdss) 60V
  • Mounting Type Surface Mount, Wettable Flank
  • Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V
  • Power - Max 27.8W (Tc)
  • Package / Case PowerPAK® 1212-8W Dual
  • Supplier Device Package PowerPAK® 1212-8W Dual
  • Rds On (Max) @ Id, Vgs 36mOhm @ 1.25A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 572pF @ 25V