SSM6K819R,LF
Part Number:
SSM6K819R,LF
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Toshiba Semiconductor and Storage
Description:
N-CH MOSFET, 100 V, 10 A, 0.0258
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Package / Case 6-SMD, Flat Leads
- Power Dissipation (Max) 1.5W (Ta)
- Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V
- Vgs(th) (Max) @ Id 2.5V @ 100µA
- Operating Temperature 175°C
- Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 15 V
- Supplier Device Package 6-TSOP-F
- Rds On (Max) @ Id, Vgs 25.8mOhm @ 4A, 10V