TJ20A10M3(STA4,Q

TJ20A10M3(STA4,Q

Part Number: TJ20A10M3(STA4,Q
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: TJ20A10M3(STA4,Q
Packaging: Tube
ROHS Status: Yes
Currency: -

Specification

  • Mounting Type Through Hole
  • Part Status Discontinued at
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • FET Type P-Channel
  • Operating Temperature 150°C
  • Package / Case TO-220-3 Full Pack
  • Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
  • Power Dissipation (Max) 35W (Tc)
  • Vgs(th) (Max) @ Id 4V @ 1mA
  • Current - Continuous Drain (Id) @ 25°C 20A (Ta)
  • Supplier Device Package TO-220SIS
  • Rds On (Max) @ Id, Vgs 90mOhm @ 10A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 10 V