TJ90S04M3L,LQ

TJ90S04M3L,LQ

Part Number: TJ90S04M3L,LQ
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Grade Automotive
  • Qualification AEC-Q101
  • FET Type P-Channel
  • Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Vgs(th) (Max) @ Id 2V @ 1mA
  • Power Dissipation (Max) 180W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Drain to Source Voltage (Vdss) 40 V
  • Current - Continuous Drain (Id) @ 25°C 90A (Ta)
  • Gate Charge (Qg) (Max) @ Vgs 172 nC @ 10 V
  • Operating Temperature 175°C
  • Vgs (Max) +10V, -20V
  • Supplier Device Package DPAK+
  • Input Capacitance (Ciss) (Max) @ Vds 7700 pF @ 10 V
  • Rds On (Max) @ Id, Vgs 4.3mOhm @ 45A, 10V