TK090E65Z,S1X
Part Number:
TK090E65Z,S1X
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Toshiba Semiconductor and Storage
Description:
650V DTMOS VI TO-220 90MOHM
Packaging:
Tube
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Supplier Device Package TO-220
- Operating Temperature 150°C
- Power Dissipation (Max) 230W (Tc)
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 30A (Ta)
- Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
- Rds On (Max) @ Id, Vgs 90mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id 4V @ 1.27mA
- Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 300 V