TK2P90E,RQ

TK2P90E,RQ

Part Number: TK2P90E,RQ
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature 150°C
  • Supplier Device Package DPAK
  • Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
  • Drain to Source Voltage (Vdss) 900 V
  • Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
  • Vgs (Max) ±30V
  • Current - Continuous Drain (Id) @ 25°C 2A (Ta)
  • Power Dissipation (Max) 80W (Tc)
  • Vgs(th) (Max) @ Id 4V @ 200µA
  • Rds On (Max) @ Id, Vgs 5.9Ohm @ 1A, 10V