TK9R6E15Q5,S1X

TK9R6E15Q5,S1X

Part Number: TK9R6E15Q5,S1X
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: 150V UMOS10-HSD TO-220 9.6MOHM
Packaging: Tube
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Package / Case TO-220-3
  • Supplier Device Package TO-220
  • Power Dissipation (Max) 200W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
  • Drain to Source Voltage (Vdss) 150 V
  • Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
  • Operating Temperature 175°C
  • Vgs(th) (Max) @ Id 4.5V @ 1.1mA
  • Input Capacitance (Ciss) (Max) @ Vds 3690 pF @ 75 V
  • Current - Continuous Drain (Id) @ 25°C 104A (Ta), 52A (Tc)
  • Rds On (Max) @ Id, Vgs 9.6mOhm @ 26A, 10V