TK9R7A15Q5,S4X
Part Number:
TK9R7A15Q5,S4X
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Toshiba Semiconductor and Storage
Description:
150V UMOS10-HSD TO-220SIS 9.7MOH
Packaging:
Tube
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3 Full Pack
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Drain to Source Voltage (Vdss) 150 V
- Power Dissipation (Max) 45W (Tc)
- Current - Continuous Drain (Id) @ 25°C 49A (Tc)
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
- Operating Temperature 175°C
- Vgs(th) (Max) @ Id 4.5V @ 1.1mA
- Rds On (Max) @ Id, Vgs 9.7mOhm @ 24.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3690 pF @ 75 V