TP65H035G4QS

TP65H035G4QS

Part Number: TP65H035G4QS
Product Classification: Single FETs, MOSFETs
Manufacturer: Transphorm
Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
  • Drain to Source Voltage (Vdss) 650 V
  • Power Dissipation (Max) 156W (Tc)
  • Technology GaNFET (Gallium Nitride)
  • Package / Case 8-PowerSFN
  • Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
  • Current - Continuous Drain (Id) @ 25°C 46.5A (Tc)
  • Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id 4.8V @ 1mA
  • Supplier Device Package TOLL