TP65H050G4WS

TP65H050G4WS

Part Number: TP65H050G4WS
Product Classification: Single FETs, MOSFETs
Manufacturer: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Tube
ROHS Status: Yes
Currency: -

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
  • Package / Case TO-247-3
  • Drain to Source Voltage (Vdss) 650 V
  • Supplier Device Package TO-247-3
  • Current - Continuous Drain (Id) @ 25°C 34A (Tc)
  • Technology GaNFET (Gallium Nitride)
  • Power Dissipation (Max) 119W (Tc)
  • Rds On (Max) @ Id, Vgs 60mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id 4.8V @ 700µA
  • Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V