TP65H300G4JSGB-TR

TP65H300G4JSGB-TR

Part Number: TP65H300G4JSGB-TR
Product Classification: Single FETs, MOSFETs
Manufacturer: Transphorm
Description: GANFET N-CH 650V 9.2A QFN5X6
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Current - Continuous Drain (Id) @ 25°C 9.2A (Tc)
  • Vgs (Max) ±10V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 10 V
  • Package / Case 8-PowerTDFN
  • Power Dissipation (Max) 41.6W (Tc)
  • Supplier Device Package 8-PQFN (5x6)
  • Technology GaNFET (Gallium Nitride)
  • Vgs(th) (Max) @ Id 2.8V @ 500µA
  • Drive Voltage (Max Rds On, Min Rds On) 6V
  • Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 400 V
  • Rds On (Max) @ Id, Vgs 312mOhm @ 6.5A, 6V