TP65H480G4JSG

TP65H480G4JSG

Part Number: TP65H480G4JSG
Product Classification: Single FETs, MOSFETs
Manufacturer: Transphorm
Description: MOSFET 650V, 480mOhm
Packaging: Bulk
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
  • Drain to Source Voltage (Vdss) 650 V
  • Vgs (Max) ±18V
  • Technology GaNFET (Gallium Nitride)
  • Drive Voltage (Max Rds On, Min Rds On) 8V
  • Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
  • Package / Case 3-PowerTDFN
  • Rds On (Max) @ Id, Vgs 560mOhm @ 3.4A, 8V
  • Vgs(th) (Max) @ Id 2.8V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs 9 nC @ 8 V
  • Power Dissipation (Max) 13.2W (Tc)
  • Supplier Device Package 3-PQFN (5x6)