TPCC8105,L1Q

TPCC8105,L1Q

Part Number: TPCC8105,L1Q
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Grade -
  • Qualification -
  • FET Type P-Channel
  • Operating Temperature 150°C
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Drain to Source Voltage (Vdss) 30 V
  • Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
  • Package / Case 8-VDFN Exposed Pad
  • Current - Continuous Drain (Id) @ 25°C 23A (Ta)
  • Vgs (Max) +20V, -25V
  • Power Dissipation (Max) 700mW (Ta), 30W (Tc)
  • Supplier Device Package 8-TSON Advance (3.3x3.3)
  • Vgs(th) (Max) @ Id 2V @ 500µA
  • Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 10 V
  • Rds On (Max) @ Id, Vgs 7.8mOhm @ 11.5A, 10V