TPH2R306PL1,LQ

TPH2R306PL1,LQ

Part Number: TPH2R306PL1,LQ
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: 60V UMOS9-H SOP ADVANCE(N) 2.3MO
Packaging: Tape & Reel (TR)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Drain to Source Voltage (Vdss) 60 V
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
  • Package / Case 8-PowerTDFN
  • Operating Temperature 175°C
  • Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id 2.5V @ 500µA
  • Input Capacitance (Ciss) (Max) @ Vds 5435 pF @ 30 V
  • Supplier Device Package 8-SOP Advance (5x5.75)
  • Power Dissipation (Max) 3W (Ta), 170W (Tc)
  • Current - Continuous Drain (Id) @ 25°C 190A (Ta), 100A (Tc)