TPH2R903PL,L1Q

TPH2R903PL,L1Q

Part Number: TPH2R903PL,L1Q
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: PB-FPOWERMOSFETTRANSISTORSOP8-AD
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Drain to Source Voltage (Vdss) 30 V
  • Current - Continuous Drain (Id) @ 25°C 70A (Tc)
  • Package / Case 8-PowerVDFN
  • Supplier Device Package 8-SOP Advance (5x5)
  • Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 15 V
  • Operating Temperature 175°C
  • Power Dissipation (Max) 960mW (Ta), 81W (Tc)
  • Rds On (Max) @ Id, Vgs 2.9mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id 2.1V @ 200µA