TPN1200APL,L1Q

TPN1200APL,L1Q

Part Number: TPN1200APL,L1Q
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C 40A (Tc)
  • Package / Case 8-PowerVDFN
  • Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 10V
  • Operating Temperature 175°C
  • Supplier Device Package 8-TSON Advance (3.1x3.1)
  • Vgs(th) (Max) @ Id 2.5V @ 300µA
  • Power Dissipation (Max) 630mW (Ta), 104W (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds 1855 pF @ 50 V