TPW2R508NH,L1Q

TPW2R508NH,L1Q

Part Number: TPW2R508NH,L1Q
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DOS
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature 150°C
  • Drain to Source Voltage (Vdss) 75 V
  • Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
  • Vgs(th) (Max) @ Id 4V @ 1mA
  • Package / Case 8-PowerVDFN
  • Rds On (Max) @ Id, Vgs 2.5mOhm @ 50A, 10V
  • Current - Continuous Drain (Id) @ 25°C 150A (Ta)
  • Power Dissipation (Max) 800mW (Ta), 142W (Tc)
  • Supplier Device Package 8-DSOP Advance
  • Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 37.5 V