TSM110NB04DCR RLG
Part Number:
TSM110NB04DCR RLG
Product Classification:
FET, MOSFET Arrays
Manufacturer:
Taiwan Semiconductor Corporation
Description:
MOSFET 2N-CH 40V 10A 8PDFN
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Operating Temperature -55°C ~ 155°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
- Configuration 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss) 40V
- Package / Case 8-PowerTDFN
- Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 10V
- Supplier Device Package 8-PDFN (5x6)
- Power - Max 2W (Ta), 48W (Tc)
- Current - Continuous Drain (Id) @ 25°C 10A (Ta), 48A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1506pF @ 20V