TSM60NC196CIT C0G
Part Number:
TSM60NC196CIT C0G
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Taiwan Semiconductor Corporation
Description:
600V, 12A, SINGLE N-CHANNEL HIGH
Packaging:
Tube
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 74W (Tc)
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Drain to Source Voltage (Vdss) 600 V
- Package / Case TO-220-3 Full Pack
- Vgs(th) (Max) @ Id 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
- Supplier Device Package ITO-220TL
- Rds On (Max) @ Id, Vgs 196mOhm @ 4A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1506 pF @ 300 V