TSM80N1R2CI

TSM80N1R2CI

Part Number: TSM80N1R2CI
Product Classification: Single FETs, MOSFETs
Manufacturer: Taiwan Semiconductor Corporation
Description: 800V, 5.5A, SINGLE N-CHANNEL POW
Packaging: Tube
ROHS Status: Yes
Currency: -

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
  • Package / Case TO-220-3 Full Pack, Isolated Tab
  • Drain to Source Voltage (Vdss) 800 V
  • Vgs (Max) ±30V
  • Power Dissipation (Max) 25W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 100 V
  • Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.8A, 10V
  • Supplier Device Package ITO-220