TW027Z65C,S1F

TW027Z65C,S1F

Part Number: TW027Z65C,S1F
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247-4L 27
Packaging: Tube
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Grade -
  • Qualification -
  • Current - Continuous Drain (Id) @ 25°C 58A (Tc)
  • Drain to Source Voltage (Vdss) 650 V
  • Power Dissipation (Max) 156W (Tc)
  • Package / Case TO-247-4
  • Vgs(th) (Max) @ Id 5V @ 3mA
  • Operating Temperature 175°C
  • Technology SiCFET (Silicon Carbide)
  • Vgs (Max) +25V, -10V
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Input Capacitance (Ciss) (Max) @ Vds 2288 pF @ 400 V
  • Gate Charge (Qg) (Max) @ Vgs 65 nC @ 18 V
  • Supplier Device Package TO-247-4L(X)
  • Rds On (Max) @ Id, Vgs 38mOhm @ 29A, 18V