UG3SC120009K4S

UG3SC120009K4S

Part Number: UG3SC120009K4S
Product Classification: Single FETs, MOSFETs
Manufacturer: onsemi
Description: 1200V/9MO,SICFET,DG,G3,TO247-4
Packaging: Box
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • Vgs (Max) ±20V
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Current - Continuous Drain (Id) @ 25°C 120A (Tc)
  • Drain to Source Voltage (Vdss) 1200 V
  • Package / Case TO-247-4
  • Drive Voltage (Max Rds On, Min Rds On) 12V
  • Technology SiCFET (Silicon Carbide)
  • Power Dissipation (Max) 789W (Tc)
  • Supplier Device Package TO-247-4
  • Gate Charge (Qg) (Max) @ Vgs 196 nC @ 15 V
  • Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 12V
  • Vgs(th) (Max) @ Id 4.7V @ 320mA
  • Input Capacitance (Ciss) (Max) @ Vds 8157 pF @ 800 V