UHB50SC12E1BC3N
Part Number:
UHB50SC12E1BC3N
Product Classification:
FET, MOSFET Arrays
Manufacturer:
onsemi
Description:
MOSFET 2P-CH 1200V 69A MODULE
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Chassis Mount
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case Module
- Supplier Device Package Module
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Vgs(th) (Max) @ Id 6V @ 20mA
- Power - Max 208W (Tc)
- Configuration 2 P-Channel (Half Bridge)
- Current - Continuous Drain (Id) @ 25°C 69A (Tj)
- Rds On (Max) @ Id, Vgs 24mOhm @ 50A, 12V
- Gate Charge (Qg) (Max) @ Vgs 85nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds 2930pF @ 800V