XP10N3R8S
Part Number:
XP10N3R8S
Product Classification:
Single FETs, MOSFETs
Manufacturer:
YAGEO XSemi
Description:
MOSFET N CH 100V 132A TO-263
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package TO-263
- Gate Charge (Qg) (Max) @ Vgs 136 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 132A (Tc)
- Rds On (Max) @ Id, Vgs 3.88mOhm @ 60A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 6560 pF @ 80 V
- Power Dissipation (Max) 3.12W (Ta), 125W (Tc)