XPJR6604PB,LXHQ

XPJR6604PB,LXHQ

Part Number: XPJR6604PB,LXHQ
Product Classification: Single FETs, MOSFETs
Manufacturer: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade Automotive
  • Qualification AEC-Q101
  • Vgs(th) (Max) @ Id 3V @ 1mA
  • Drain to Source Voltage (Vdss) 40 V
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
  • Gate Charge (Qg) (Max) @ Vgs 128 nC @ 10 V
  • Power Dissipation (Max) 375W (Tc)
  • Operating Temperature 175°C
  • Current - Continuous Drain (Id) @ 25°C 200A (Ta)
  • Package / Case 5-PowerSFN
  • Rds On (Max) @ Id, Vgs 0.66mOhm @ 100A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 11380 pF @ 10 V
  • Supplier Device Package S-TOGL™