100+
Envíos diarios promedio
1000+
Fabricantes originales
1000+㎡
Almacén con stock
5 millones+
Componentes estándar
PIEZAX EN STOCK
MT40A512M16TB-062E:J
MT40A512M16TB-062E:J
Micron Technology Inc.
MT41K512M16VRP-107 IT:P
MT41K512M16VRP-107 IT:P
Micron Technology Inc.
MT53E768M32D4DT-053 WT:E
MT53E768M32D4DT-053 WT:E
Micron Technology Inc.
MT29F2G08ABAEAH4-IT:E
MT29F2G08ABAEAH4-IT:E
Micron Technology Inc.
MT25QL256ABA8E12-1SIT
MT25QL256ABA8E12-1SIT
Micron Technology Inc.
MT62F1G32D2DS-023 IT:B
MT62F1G32D2DS-023 IT:B
Micron Technology Inc.
MT41K256M16TW-107 AAT:P
MT41K256M16TW-107 AAT:P
Micron Technology Inc.
MT41K256M16TW-107:P
MT41K256M16TW-107:P
Micron Technology Inc.
MT47H128M16RT-25E:C
MT47H128M16RT-25E:C
Micron Technology Inc.
MT40A1G16KD-062E:E
MT40A1G16KD-062E:E
Micron Technology Inc.
MT40A512M16LY-062E:E
MT40A512M16LY-062E:E
Micron Technology Inc.
MT41K256M8DA-125:K
MT41K256M8DA-125:K
Micron Technology Inc.
MT41K128M16JT-125:K
MT41K128M16JT-125:K
Micron Technology Inc.
MT40A256M16GE-083E:B
MT40A256M16GE-083E:B
Micron Technology Inc.
THGBMBG7D2KBAIL
THGBMBG7D2KBAIL
Toshiba
K4B4G1646E-BMMA
K4B4G1646E-BMMA
Samsung
K4A8G165WB-BIWE
K4A8G165WB-BIWE
Samsung
K4B4G1646E-BYMA
K4B4G1646E-BYMA
Samsung Electro-Mechanics
TH58TEG8H2HBAS9
TH58TEG8H2HBAS9
Kioxia America, Inc.
MT29F512G08AUCBBH8-6IT:B
MT29F512G08AUCBBH8-6IT:B
Micron Technology Inc.
MT41K128M16JT-125 IT:K
MT41K128M16JT-125 IT:K
Micron Technology Inc.
MTFC4GLGDQ-AIT A
MTFC4GLGDQ-AIT A
Micron Technology Inc.
MT29F2G01ABAGDWB-IT:G
MT29F2G01ABAGDWB-IT:G
Micron Technology Inc.
MT40A512M16JY-083E:B TR
MT40A512M16JY-083E:B TR
Micron Technology Inc.
ATMEGA128A-AU
ATMEGA128A-AU
Microchip Technology
MT41K256M16TW-107 IT:P
MT41K256M16TW-107 IT:P
Micron Technology Inc.
MTFC32GAKAEJP-AIT
MTFC32GAKAEJP-AIT
Micron Technology Inc.
MT40A512M16LY-075:E
MT40A512M16LY-075:E
Micron Technology Inc.
STM32F417IGT6
STM32F417IGT6
STMicroelectronics
TPS5430DDAR
TPS5430DDAR
Texas Instruments
Fabricante
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MT40A512M16TB‑062E:J: Memoria SDRAM DDR4-3200 de 8 Gb para compras de memoria OEM y EMS embebida 2026-10-12 14:09:47 MT53E768M32D4DT-053 WT:E: 24 Gb memoria dinámica de acceso aleatorio de baja potencia LPDDR4 comercial, para compras de OEM y EMS embebidas 2026-10-08 11:24:27
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