100+
日均出货量
1000+
原厂制造商
1000+㎡
现货仓库
500万+
标准元器件
现货零件
MT40A512M16TB-062E:J
MT40A512M16TB-062E:J
Micron Technology Inc.
MT41K512M16VRP-107 IT:P
MT41K512M16VRP-107 IT:P
Micron Technology Inc.
MT53E768M32D4DT-053 WT:E
MT53E768M32D4DT-053 WT:E
Micron Technology Inc.
MT29F2G08ABAEAH4-IT:E
MT29F2G08ABAEAH4-IT:E
Micron Technology Inc.
MT25QL256ABA8E12-1SIT
MT25QL256ABA8E12-1SIT
Micron Technology Inc.
MT62F1G32D2DS-023 IT:B
MT62F1G32D2DS-023 IT:B
Micron Technology Inc.
MT41K256M16TW-107 AAT:P
MT41K256M16TW-107 AAT:P
Micron Technology Inc.
MT41K256M16TW-107:P
MT41K256M16TW-107:P
Micron Technology Inc.
MT47H128M16RT-25E:C
MT47H128M16RT-25E:C
Micron Technology Inc.
MT40A1G16KD-062E:E
MT40A1G16KD-062E:E
Micron Technology Inc.
MT40A512M16LY-062E:E
MT40A512M16LY-062E:E
Micron Technology Inc.
MT41K256M8DA-125:K
MT41K256M8DA-125:K
Micron Technology Inc.
MT41K128M16JT-125:K
MT41K128M16JT-125:K
Micron Technology Inc.
MT40A256M16GE-083E:B
MT40A256M16GE-083E:B
Micron Technology Inc.
THGBMBG7D2KBAIL
THGBMBG7D2KBAIL
Toshiba
K4B4G1646E-BMMA
K4B4G1646E-BMMA
Samsung
K4A8G165WB-BIWE
K4A8G165WB-BIWE
Samsung
K4B4G1646E-BYMA
K4B4G1646E-BYMA
Samsung Electro-Mechanics
TH58TEG8H2HBAS9
TH58TEG8H2HBAS9
Kioxia America, Inc.
MT29F512G08AUCBBH8-6IT:B
MT29F512G08AUCBBH8-6IT:B
Micron Technology Inc.
MT41K128M16JT-125 IT:K
MT41K128M16JT-125 IT:K
Micron Technology Inc.
MTFC4GLGDQ-AIT A
MTFC4GLGDQ-AIT A
Micron Technology Inc.
MT29F2G01ABAGDWB-IT:G
MT29F2G01ABAGDWB-IT:G
Micron Technology Inc.
MT40A512M16JY-083E:B TR
MT40A512M16JY-083E:B TR
Micron Technology Inc.
ATMEGA128A-AU
ATMEGA128A-AU
Microchip Technology
MT41K256M16TW-107 IT:P
MT41K256M16TW-107 IT:P
Micron Technology Inc.
MTFC32GAKAEJP-AIT
MTFC32GAKAEJP-AIT
Micron Technology Inc.
MT40A512M16LY-075:E
MT40A512M16LY-075:E
Micron Technology Inc.
STM32F417IGT6
STM32F417IGT6
STMicroelectronics
TPS5430DDAR
TPS5430DDAR
Texas Instruments
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博客
2026-11-06 16:07:26
2026-10-27 15:26:17 2026-10-23 13:42:40
MT53D512M32D2DS-053 16Gb LPDDR4: 1866MT/s Low-Power DRAM for OEM & EMS Edge Projects
MT53D512M32D2DS-053 16Gb LPDDR4: 1866MT/s Low-Power DRAM for OEM & EMS Edge Projects Lead Paragraph The MT53D512M32D2DS-053 is a 16Gb Micron LPDDR4 DRAM running at 1866MT/s with 1.1V low core voltage,…
2026-10-22 11:40:01
1. `MT41K256M16TW‑107:P 4Gb DDR3L SDRAM: Stable 1866MT/s DRAM for OEM & Embedded Projects` 2. 2026-10-15 16:19:29 MT40A512M16TB‑062E:J：用于嵌入式OEM和EMS内存采购的8Gb DDR4-3200 SDRAM 2026-10-12 14:09:47
MT53E768M32D4DT-053 WT:E: 24Gb 商用级 LPDDR4 SDRAM，用于嵌入式 OEM 和 EMS 采购 2026-10-08 11:24:27 MT29F2G08ABAEAH4‑IT:E: 2Gb 工业级 SLC NAND 闪存，用于嵌入式 OEM 和 EMS 采购 2026-09-22 15:57:33 MT25QL256ABA8E12 1SIT：用于工业OEM和EMS固件存储的256Mb四路SPI串行NOR闪存 2026-09-21 16:17:43 MTFC32GAKAEJP AIT：32GB工业级eMMC 5.1管理NAND用于嵌入式OEM和EMS采购 2026-09-18 12:01:57 THGBMBG7D2KBAIL 16GB eMMC 5 用于旧式嵌入式存储 2026-09-17 11:31:11 阅读更多